Hongliang Chang1,2?, Zhetong Liu3,4,5,6?, Shenyuan Yang2,7?, Yaqi Gao1,2, Jingyuan Shan3,5, Bingyao Liu3,4,5,6, Jingyu Sun5, Zhaolong Chen3,5, Jianchang Yan1,2, Zhiqiang Liu1,2, Junxi Wang1,2, Peng Gao3,4,5,6?, Jinmin Li1,2?, Zhongfan Liu3,5? and Tongbo Wei1,2?
中科院半導體研究所魏同波研究員、李晉閩研究員，北京大學劉忠范院士、高鵬研究員
1 Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, 100083 Beijing, China.
2 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, 100049 Beijing, China.
3 Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, 100871 Beijing, China.
4 Electron Microscopy Laboratory, and International Center for Quantum Materials, School of Physics, Peking University, 100871 Beijing, China.
5 Beijing graphene institute (BGI), 100095 Beijing, China.
6 Academy for Advanced Interdisciplinary Studies, Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced Materials, Peking University, 100871 Beijing, China.
7 State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, 100083 Beijing, China
? These authors contributed equally: Hongliang Chang, Zhetong Liu, Shenyuan Yang
